【英文标准名称】:Electronicdesignautomationlibraries-Part3:ModelsofintegratedcircuitsforEMIbehaviouralsimulation
【原文标准名称】:电子设计自动化程序库.第3部分:EMI行为模拟用集成电路的模型
【标准号】:IEC/TR62014-3-2002
【标准状态】:现行
【国别】:国际
【发布日期】:2002-12
【实施或试行日期】:
【发布单位】:国际电工委员会(IEC)
【起草单位】:IEC/TC93
【标准类型】:()
【标准水平】:()
【中文主题词】:输入;数字集成电路;电子设备及元件;电子设备及元件;规范(验收);集成电路;数字电路;定义;自动化
【英文主题词】:digitalintegratedcircuits;automation;emi;electronicequipmentandcomponents;input;integratedcircuits;definition;digitalcircuits;definitions;specification(approval)
【摘要】:TheobjectiveofthisTechnicalReport(TR)ICEM(IntegratedCircuitElectricalModel)forComponentsistoproposeelectricalmodellingforintegratedcircuitinternalactivities.Thismodelwillbeusedtoevaluateelectromagneticbehaviourandperformancesofelectronicequipment.1GeneralIntegratedcircuitsintegratemoreandmoregatesonsiliconandthetechnologiesarefasterandfaster.Topredicttheelectromagneticbehaviourofequipment,itisrequiredtomodelICinterfaceswitchingandtheirinternalactivitiesaswell.IndeedIBISandIMICmodelsarefocusedmainlyoninterfaceactivitypredictions(cross-talk,overshoot,etc.).SeeIEC62014-1.ThisreportdescribesamodelforEMIsimulationduetoICinternalactivities.Thismodelgivesmoreaccuratelytheelectromagneticemissionsofelectronicequipmentbytakingintoaccounttheinfluenceofinternalactivities.ThismodelgivesgeneraldatawhichcouldbeimplementedindifferentformatsuchasIBIS,IMIC,SPICE,etc.DuringthedesignstageoftheapplicationthatwillexploittheIC,itbecomesusefultopredictandtopreventelectromagneticriskswiththeCADtool.AccurateICmodellingisnecessarytorunonthesesimulationtools.Threecouplingmechanismsoftheinternalactivitiesforemission(Figure1)areproposedintheICEMmodel:·conductedemissionsthroughsupplylines;·conductedemissionsthroughinput/outputlines;·directradiatedemissions.Thisreportproposesamodelthataddressesthosethreetypesofcouplinginasingleapproach.Theelementsofthemodelwouldbekeptassimpleaspossibletoeasetheidentificationandsimulationprocess.2PhilosophyThepurposeofthisreportistoprovidedatatoenableprinted-circuit-boardlevel(PCB)electromagnetictoolstocomputetheelectromagneticfieldsproducedbyintegratedcircuitsandtheirassociatedPCB.Thesedatacanbeextractedfrommeasurementmethods,asdescribedinIEC61967,orobtainedfromICsimulationtools.2.1OriginofparasiticemissionTheoriginofparasiticemissioninICisduetothecurrentflowingthroughalltheICgates(IvandIv)duringhightoloworlowtohightransitionsasshowninFigure2.Thecombinationofseveralhundredthousandsofgatesleadtoveryimportantpeaksofcurrent,mainlyatriseandfalledgesoftheclockcircuit.ForexampleFigure3plotsthenumberofgatesswitchingversusthetimeforanICintegrating1000000transistors.Consequently,highcurrentspikesarecreatedinsidethedieandinducevoltagedropsoftheinternalvoltagereferences.2.2Conductedemissionthroughpower-supplylinesThecurrentspikescreatedinsidethediearepartiallyreducedthankstotheon-chipdecouplingcapacitance.Anyhow,asignificantportionofthecurrentspikesispresentatthepower-supplypinsofthechip.ThiscurrentcouldbemeasuredaccordingtoIEC61967orothermethodspermittingtohavethepower-supplycurrents.2.3Conductedemissionsthroughinput/outputlines(I/O)TheinternalvoltagedropsgeneratedbythecurrentspikescreatenoiseontheI/Osthroughdirectconnection,parasiticcapacitiveandinductivecouplingsand/orthroughcommonimpedance.ThePCBwiresconnectedtotheI/Ocanactasantennasandpropagateelectromagneticemissions.Themeasurementset-upisdoneaccordingtoIEC61967.2.4DirectradiatedemissionsTheinternalcurrentflowinginlowimpedanceloopsgenerateselectromagneticfieldswhichcanbemeasuredinnearfieldaccordingtoIEC61967.
【中国标准分类号】:L77
【国际标准分类号】:35_240_50;31_200;25_040_01
【页数】:20P.;A4
【正文语种】:英语